Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor.
نویسندگان
چکیده
An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.
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ورودعنوان ژورنال:
- Chemical communications
دوره 44 شماره
صفحات -
تاریخ انتشار 2008